Nachtwei Group, Technische Universität Braunschweig
The main subjects of research of Prof. Dr. G.T. Nachtwei are the magnetotransport and the magnetooptics investigated at micro and nanostructures in semiconductors. Measurements of the Shubnikov- de Haas- effect, of the quantum Hall effect and of the photoconductivity are performed at various two-dimensional electron and hole systems at the interfaces of different semiconductor devices (for example at GaAs/AlGaAs heterojunctions or at quantum well structures embedded in HgCdTe). Recently, the focus of the investigations is on the THz photoconductivity of these systems for developing new THz detectors. For this a p-Ge laser system is applied in the Nachtwei group.